参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max- 32 V
Continuous Collector Current- 0.8 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor 2SB1197KT146R
TARIC8541290000
RoHS Details
Series2SB1197K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 32V 0.8A
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)