参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 32 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min82
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541290000
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP 32V 0.5A
Product TypeBJTs - Bipolar Transistors
Series2SA1036K
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation200 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)