参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current0.8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.1 V
Width1.6 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SD1781KT146R
Product CategoryBipolar Transistors - BJT
Series2SD1781K
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 32V 0.8A
Moisture Sensitivity Level1 (Unlimited)