参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT200 MHz
Maximum DC Collector Current- 500 mA
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 620 mV
DC Collector/Base Gain hfe Min100
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
TARIC8541210000
RoHS Details
Pd - Power Dissipation425 mW
BrandROHM Semiconductor
Part # AliasesBCX17HZG
ImageROHM Semiconductor BCX17HZGT116
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT TRANS DIGITAL PNP