参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-416FL-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR522EBTL
TARIC8541290000
Unit Weight0.000212 oz
RoHS Details
Series2SCR522EB
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SCR522EB
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN General Purpose Amplification Transistor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)