参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 10 mA, 3 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity3000
CNHTS8541210000
DescriptionBipolar Transistors - BJT NPN 50V 0.5A
BrandROHM Semiconductor
ImageROHM Semiconductor 2SD1484KT146Q
Series2SD1484K
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation200 mW
USHTS8541290095