参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.1 V
MXHTS85412999
DC Collector/Base Gain hfe Min120
KRHTS8541299000
CNHTS8541290000
Package / CaseUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
Series2SCR523UB
RoHS Details
ImageROHM Semiconductor 2SCR523UBTL
Product CategoryBipolar Transistors - BJT
Unit Weight0.001151 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SCR523UB
USHTS8541290095
DescriptionBipolar Transistors - BJT Trans NPN GP 50V 0.1A
Moisture Sensitivity Level1 (Unlimited)