参数项参数值
参数项参数值
DC Current Gain hFE Max480
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 300 mV
DC Collector/Base Gain hfe Min210
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
ImageROHM Semiconductor BC857BU3HZGT106
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT TRANS DIGITAL PNP
Moisture Sensitivity Level1 (Unlimited)