参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 2 A
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SAR574D3FRATL
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation10 W
DescriptionBipolar Transistors - BJT TRANS DIGITAL PNP
USHTS8541290095