参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
Width1.6 mm
MXHTS85412999
DC Collector/Base Gain hfe Min180
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTSMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Series2SD2444K
BrandROHM Semiconductor
ImageROHM Semiconductor 2SD2444KT146R
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT DVR NPN 15V 1A
USHTS8541290095