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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min270
Width1.7 mm
MXHTS85412999
Length2 mm
KRHTS8541299000
Package / CaseTUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2703TL
TARIC8541290000
Unit Weight0.011142 oz
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation800 mW
Part # Aliases2SD2703
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 30V 1A NPN LOW
ManufacturerROHM Semiconductor
USHTS8541290095