参数项参数值
参数项参数值
DC Current Gain hFE Max180 at 10 mA, 3 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor 2SD1484KT146R
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Series2SD1484K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 50V 0.5A
ManufacturerROHM Semiconductor
USHTS8541290095