参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.15 V
MXHTS85412999
DC Collector/Base Gain hfe Min120
KRHTS8541299000
CNHTS8541290000
Package / CaseUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Series2SAR523UB
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor 2SAR523UBTL
Product CategoryBipolar Transistors - BJT
Unit Weight0.000968 oz
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SAR523UB
USHTS8541290095
DescriptionBipolar Transistors - BJT GP Amplification Trans
Moisture Sensitivity Level1 (Unlimited)