参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
Width1.2 mm
Length1.6 mm
Height0.5 mm
DC Collector/Base Gain hfe Min80
MXHTS85412999
KRHTS8541299000
Package / CaseEMT-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
BrandROHM Semiconductor
SeriesEMB10
ManufacturerROHM Semiconductor
TARIC8541290000
Factory Pack Quantity8000
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
Product TypeBJTs - Bipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
ImageROHM Semiconductor EMB10T2R
Unit Weight0.001281 oz
SubcategoryTransistors
USHTS8541290095
Part # AliasesEMB10
Pd - Power Dissipation150 mW
Typical Resistor Ratio21
Typical Input Resistor2.2 kOhms
Moisture Sensitivity Level1 (Unlimited)