参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual Common Emitter
Transistor PolarityNPN
DC Collector/Base Gain hfe Min80
Width1.2 mm
Height0.5 mm
Length1.6 mm
Package / CaseEMT-5
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
SeriesEMG11
ImageROHM Semiconductor EMG11T2R
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
ManufacturerROHM Semiconductor
Factory Pack Quantity8000
Part # AliasesEMG11
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Product CategoryBipolar Transistors - Pre-Biased
Typical Resistor Ratio21
SubcategoryTransistors
Typical Input Resistor2.2 kOhms