参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SCR523MT2L
Series2SCR523M
SubcategoryTransistors
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SCR523M
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN General Purpose Amplification Transistor
Moisture Sensitivity Level1 (Unlimited)