BSM180D12P2E002

BSM180D12P2E002

厂牌：ROHM

包装：BAG 4

类目：元器件 > 分立器件 > MOSFET

编号：B000044449025

描述：SIC MOSFET DUAL N CHANNEL 1.2KV 204A

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商品参数

参数项参数值

参数项参数值

PackagingBulk

Package / CaseModule

Mounting TypeChassis Mount

Configuration2 N-Channel (Half Bridge)

Operating Temperature-40°C ~ 150°C (TJ)

TechnologySilicon Carbide (SiC)

Power - Max1360W (Tc)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C204A (Tc)

Input Capacitance (Ciss) (Max) @ Vds18000pF @ 10V

Rds On (Max) @ Id, Vgs-

Gate Charge (Qg) (Max) @ Vgs-

FET Feature-

Vgs(th) (Max) @ Id4V @ 35.2mA

Supplier Device PackageModule