参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current200 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage120 mV
DC Collector/Base Gain hfe Min120
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
ImageROHM Semiconductor EMX51T2R
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
Part # AliasesEMX51
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
USHTS8541210095