参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412999
Length1.6 mm
Width0.8 mm
Height0.7 mm
KRHTS8541299000
DC Collector/Base Gain hfe Min100
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseEMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor DTA114TETL
BrandROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
TARIC8541290000
RoHS Details
DescriptionBipolar Transistors - Pre-Biased PNP 50V 100MA
SeriesDTA114TET
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Unit Weight0.000968 oz
USHTS8541290095
Part # AliasesDTA114TE
Pd - Power Dissipation150 mW
Typical Input Resistor10 kOhms