参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance1.7 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time18 ns
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time28 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000600 oz
ImageROHM Semiconductor EM6K31T2R
TARIC8541290000
Pd - Power Dissipation150 mW
RoHS Details
Part # AliasesEM6K31
Factory Pack Quantity8000
SeriesEM6K31
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage60 V
Product TypeMOSFET
Number of Channels2 Channel
DescriptionMOSFET TRANS MOSFET NCH 60V 0.25A 6PIN
Rise Time5 ns
SubcategoryMOSFETs
USHTS8541290095