参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min120
CNHTS8541210000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor 2SC4081U3HZGT106Q
BrandROHM Semiconductor
Unit Weight0.001123 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT NPN 50V 0.15A 0.2W SOT-323
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)