参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 10 mA, 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.2 mm
Height0.5 mm
DC Collector/Base Gain hfe Min270
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseEMT-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor EMX18T2R
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesEMX18
Unit Weight0.000606 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity8000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT DUAL NPN 12V 500MA
Part # AliasesEMX18
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)