参数项参数值
参数项参数值
DC Current Gain hFE Max2700
Peak DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current600 mA
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
MXHTS85412999
Length2 mm
Width1.25 mm
Height0.8 mm
KRHTS8541299000
DC Collector/Base Gain hfe Min820
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseUMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor DTC614TUT106
BrandROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
TARIC8541290000
RoHS Details
DescriptionBipolar Transistors - Pre-Biased TRANSISTOR DIGITAL SMT; NPN; 20V; 600mA
SeriesDTC614TU
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
USHTS8541290095
Part # AliasesDTC614TU
Pd - Power Dissipation200 mW
Typical Input Resistor10 kOhms