参数项参数值
参数项参数值
DC Current Gain hFE Max1800
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max25 V
Continuous Collector Current1.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Collector-Emitter Saturation Voltage0.3 V
Width2.5 mm
DC Collector/Base Gain hfe Min820
Height1.5 mm
Length4.5 mm
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandROHM Semiconductor
Series2SD2537
RoHS Details
ImageROHM Semiconductor 2SD2537T100V
Product CategoryBipolar Transistors - BJT
Unit Weight0.004603 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
Part # Aliases2SD2537
DescriptionBipolar Transistors - BJT NPN 25V 1.2A