参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 0.5 A
Collector- Emitter Voltage VCEO Max- 32 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.6 V
Width1.6 mm
DC Collector/Base Gain hfe Min120
Height1.1 mm
MXHTS85412999
Length2.9 mm
CNHTS8541290000
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SA1036KT146R
Series2SA1036K
Unit Weight0.000282 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP 32V 0.5A
Moisture Sensitivity Level1 (Unlimited)