参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage140 mV
Width1.25 mm
Height0.8 mm
Length2 mm
DC Collector/Base Gain hfe Min270
Package / CaseSC-70-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
DescriptionBipolar Transistors - BJT NPN 30V 1A
BrandROHM Semiconductor
ImageROHM Semiconductor 2SD2656T106
Series2SD2656
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000219 oz
SubcategoryTransistors
Part # Aliases2SD2656
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)