参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 200 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
Width1.7 mm
MXHTS85412999
DC Collector/Base Gain hfe Min270
Length2 mm
KRHTS8541299000
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Series2SB1730
BrandROHM Semiconductor
ImageROHM Semiconductor 2SB1730TL
Unit Weight0.000988 oz
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation400 mW
Part # Aliases2SB1730
DescriptionBipolar Transistors - BJT PNP 12V 2A
USHTS8541290095