参数项参数值
参数项参数值
DC Current Gain hFE Max560 mA
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO- 20 V
Collector- Emitter Voltage VCEO Max- 20 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.3 V
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SAR522UBTL
TARIC8541290000
RoHS Details
Series2SAR522UB
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SAR522UB
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT GP Amplification Trans
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)