参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual Common Emitter
Transistor PolarityNPN
DC Collector/Base Gain hfe Min100
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
SeriesEMG4
ImageROHM Semiconductor EMG4T2R
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Part # AliasesEMG4
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity8000
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Typical Input Resistor10 kOhms
USHTS8541290095