参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 50 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage130 mV
DC Collector/Base Gain hfe Min180 at 50 mA, 2 V
Package / CaseSC-62-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SCR553P5T100
Series2SxR
Unit Weight0.005464 oz
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR553P5
DescriptionBipolar Transistors - BJT NPN 50V Vceo 2A Ic MPT3
Moisture Sensitivity Level1 (Unlimited)