参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage250 mV
DC Collector/Base Gain hfe Min200
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.178433 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageROHM Semiconductor BC847BU3HZGT106
BrandROHM Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerROHM Semiconductor
USHTS8541290095
DescriptionBipolar Transistors - BJT TRANS DIGITAL NPN
Moisture Sensitivity Level3 (168 Hours)