参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Id - Continuous Drain Current300 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage22 V
Typical Turn-On Delay Time40 ns
Typical Turn-Off Delay Time170 ns
Vr - Reverse Voltage1200 V
Mounting StyleScrew Mount
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
ProductPower MOSFET Modules
Fall Time30 ns
PackagingBulk
RoHS Details
Pd - Power Dissipation1360 W
ImageROHM Semiconductor BSM300C12P3E301
Factory Pack Quantity4
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeDiscrete Semiconductor Modules
Vds - Drain-Source Breakdown Voltage1200 V
Vf - Forward Voltage1.6 V
Product CategoryDiscrete Semiconductor Modules
SubcategoryDiscrete Semiconductor Modules
Rise Time35 ns
DescriptionDiscrete Semiconductor Modules SIC Pwr Module Chopper
USHTS8541500080
TypeSiC Power Module