参数项参数值
参数项参数值
DC Current Gain hFE Max2700
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Collector-Emitter Saturation Voltage300 mV
Width0.8 mm
Length1.6 mm
Height0.7 mm
DC Collector/Base Gain hfe Min820
MXHTS85412999
KRHTS8541299000
Package / CaseVMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
CNHTS8541290000
BrandROHM Semiconductor
Series2SD2707
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541290000
Factory Pack Quantity8000
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 50V 0.15A
ImageROHM Semiconductor 2SD2707T2LV
Unit Weight0.001129 oz
SubcategoryTransistors
USHTS8541290095
Pd - Power Dissipation150 mW