参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 10 mA, 2 V
Gain Bandwidth Product fT260 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min270
Width1.2 mm
Height0.5 mm
Length1.6 mm
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor EMT18T2R
SeriesEMT18
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
Part # AliasesEMT18
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT DUAL PNP/PNP