参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.6 mm
MXHTS85412999
DC Collector/Base Gain hfe Min270
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTSMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Series2SD2653K
BrandROHM Semiconductor
ImageROHM Semiconductor 2SD2653KT146
Unit Weight0.000282 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
Part # Aliases2SD2653K
DescriptionBipolar Transistors - BJT NPN 12V 2A
USHTS8541290095