参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.4 V
DC Collector/Base Gain hfe Min120
Width1.25 mm
Height0.8 mm
MXHTS85412999
Length2 mm
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SD1949T106Q
TARIC8541290000
Unit Weight0.000219 oz
RoHS Details
Series2SD1949
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 50V 0.5A
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)