参数项参数值
参数项参数值
DC Current Gain hFE Max500 at 500 mA, 2 V
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
MXHTS85412999
DC Collector/Base Gain hfe Min200 at 500 mA, 2 V
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Series2SxR
BrandROHM Semiconductor
ImageROHM Semiconductor 2SCR552P5T100
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation500 mW
Part # Aliases2SCR552P5
DescriptionBipolar Transistors - BJT NPN 30V Vceo 3A Ic MPT3
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)