参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage80 mV
DC Collector/Base Gain hfe Min270
Width1.25 mm
Height0.8 mm
MXHTS85412999
Length2 mm
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2652T106
TARIC8541290000
Unit Weight0.000176 oz
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SD2652
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 12V 1.5A
USHTS8541210075