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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage85 mV
DC Collector/Base Gain hfe Min270
Width1.7 mm
Length2 mm
Package / CaseTUMT-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD2702TL
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation800 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT 12V 1.5A NPN LOW