参数项参数值
参数项参数值
DC Current Gain hFE Max390 at 100 mA, 5 V
Gain Bandwidth Product fT220 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current700 mA
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current700 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageROHM Semiconductor 2SCR372P5T100R
TARIC8541290000
RoHS Details
Series2SxR
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 120V Vceo 700mA Ic MPT3
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)