参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.6 mm
MXHTS85412999
DC Collector/Base Gain hfe Min120
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
Series2SC2411K
RoHS Details
ImageROHM Semiconductor 2SC2411KT146Q
Product CategoryBipolar Transistors - BJT
Unit Weight0.000282 oz
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 32V 0.5A
Moisture Sensitivity Level1 (Unlimited)