参数项参数值
参数项参数值
DC Current Gain hFE Max680 at - 200 mA, - 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 12 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min270 at - 200 mA, - 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Series2SB1697
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
Part # Aliases2SB1697
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 12V 2A
USHTS8541290095