参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 100 mA, 3 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseTSMT-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity3000
CNHTS8541290000
DescriptionBipolar Transistors - BJT PNP 80V 0.5A
BrandROHM Semiconductor
ImageROHM Semiconductor 2SB1198KT146Q
Series2SB1198K
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation200 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)