参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage600 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.001023 oz
RoHS Details
Pd - Power Dissipation350 mW
Part # AliasesBC848BHZG
BrandROHM Semiconductor
ImageROHM Semiconductor BC848BHZGT116
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN SOT-23 0.1A 200 to 450hFE 30V
Moisture Sensitivity Level1 (Unlimited)