参数项参数值
参数项参数值
DC Current Gain hFE Max820 at 1 mA, 5 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Width1.2 mm
Collector-Emitter Saturation Voltage300 mV
Height0.5 mm
DC Collector/Base Gain hfe Min820 at 1 mA, 5 V
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Factory Pack Quantity8000
BrandROHM Semiconductor
SeriesEMX26
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 50V 0.15A 6PIN
TARIC8541290000
ManufacturerROHM Semiconductor
ImageROHM Semiconductor EMX26T2R
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000483 oz
SubcategoryTransistors
Part # AliasesEMX26
Pd - Power Dissipation150 mW
USHTS8541290095