参数项参数值
参数项参数值
DC Current Gain hFE Max1800
Gain Bandwidth Product fT110 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max25 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.12 V
DC Collector/Base Gain hfe Min820
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseMPT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SD2153T100V
TARIC8541290000
RoHS Details
Unit Weight0.004956 oz
Series2SD2153
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 25V 2A
USHTS8541290095