参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.8 A
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current0.8 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.1 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
Length2.9 mm
Package / CaseSC-59-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SD1781KT146Q
Unit Weight0.000282 oz
RoHS Details
Series2SD1781K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 32V 0.8A