参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity1000
CNHTS8541290000
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT Bipolar Transistors BJT I2C BUS 2Kbit
Product TypeBJTs - Bipolar Transistors
ImageROHM Semiconductor 2SCR542PT100
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Part # Aliases2SCR542P
Pd - Power Dissipation500 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)