参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 150 mA
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.5 V
Width1.2 mm
Height0.5 mm
DC Collector/Base Gain hfe Min120
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseEMT-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity8000
CNHTS8541210000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesEMT1
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT DUAL PNP 50V 150MA
ImageROHM Semiconductor EMT1T2R
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Unit Weight0.000952 oz
Part # AliasesEMT1
USHTS8541290095
Pd - Power Dissipation150 mW