参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 110 V
Collector- Emitter Voltage VCEO Max- 100 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min30
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageROHM Semiconductor BSS63AHZGT116
Factory Pack Quantity3000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)